دیتاشیت 2PB1219AR,135
مشخصات دیتاشیت
| نام دیتاشیت |
2PB1219AR,135
|
| حجم فایل |
51.873
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
Nexperia 2PB1219AR,135
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Transistor Type:
PNP
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Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
500mA
-
Power Dissipation (Pd):
200mW
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Transition Frequency (fT):
120MHz
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DC Current Gain (hFE@Ic,Vce):
120@150mA,10V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
50V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
600mV@300mA,30mA
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Package:
SOT-323-3
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Manufacturer:
Nexperia
